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ST 2SC3190
NPN Silicon Epitaxial Planar Transistor High frequency low noise amplifier application HF band amplifier application The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25oC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IE Ptot Tj TS Value 35 30 4 100 -100 400 125 -55 to +125 Unit V V V mA mA mW
O O
C C
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 07/12/2002
ST 2SC3190
Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=12V, IC=2mA Current Gain Group R O Y Collector Cutoff Current at VCB=20V Emitter Cutoff Current at VEB=2V Collector Saturation Voltage at IC=10mA, IB=1mA Base Emitter Saturation Voltage at IC=10mA, IB=1mA Transition Frequency at VCE=10V, IC=2mA Reverse Transfer Capacitance at VCE=10V, f=1MHz Collector Base Time Constant at VCE=10V, IE=-1mA, f=30MHz Noise Figure at VCE=10V, f=1MHz, IE=-1mA, Rg=50 NF 2 3.5 dB Cc,rbb 30 50 ps Cre 2.2 3 pF fT 80 120 MHz VBE(sat) 1 V VCE(sat) 0.4 V IEBO 1 A ICBO 0.1 A hFE hFE hFE 40 70 120 80 140 240 Min. Typ. Max. Unit
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 07/12/2002

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